savantic semiconductor product specification silicon pnp power transistors 2SB521 d escription with to-220 package low collector saturation voltage applications high current switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -60 v v ceo collector- emitter voltage open base -60 v v ebo emitter-base voltage open collector -8 v i c collector current -5 a p t total power dissipation t c =25 43 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB521 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma , i b =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-1ma , i c =0 -8 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.15a -0.4 v v besat base-emitter saturation voltage i c =-3a; i b =-0.15a -1.2 v i cbo collector cut-off current v cb =-50v; i e =0 -1 a i ebo emitter cut-off current v eb =-8v; i c =0 -1 a h fe dc current gain i c =-2.5a ; v ce =-2v 50 f t transition frequency i c =-0.2a ; v ce =-5v 7 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2SB521 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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